Surface and interface structure of epitaxial CoSi2films on Si(111)
作者:
R. Stalder,
N. Onda,
H. Sirringhaus,
H. von Känel,
C. W. T. Bulle‐Lieuwma,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 4
页码: 2307-2311
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585738
出版商: American Vacuum Society
关键词: COBALT SILICIDES;FILMS;SILICON;SURFACE STRUCTURE;INTERFACE STRUCTURE;MOLECULAR BEAM EPITAXY;SCANNING TUNNELING MICROSCOPY;TRANSMISSION ELECTRON MICROSCOPY;CoSi2
数据来源: AIP
摘要:
The surface and interface structures of molecular beam epitaxially grown CoSi2films on Si(111) have been studied by scanning tunneling microscopy and by transmission electron microscopy, respectively. All surfaces are found to be inhomogeneous, exhibiting (2×1) and (2×2) reconstructed domains along with unreconstructed areas, depending on their stoichiometry. All of them could be imaged with atomic resolution. The surface step structure and the formation of pinholes have been examined for a wide range of growth conditions. Evidence is presented for micron‐scale surface diffusion of Si on CoSi2at temperatures as low as 800 K. The interface step structure, studied by transmission electron microscopy, has been found to depend critically on the details of the growth procedure.
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