Recombination of atomic hydrogen on metal surfaces
作者:
R. I. Hall,
M. Landau,
F. Pichou,
C. Schermann,
I. Cadez,
期刊:
AIP Conference Proceedings
(AIP Available online 1990)
卷期:
Volume 210,
issue 1
页码: 49-61
ISSN:0094-243X
年代: 1990
DOI:10.1063/1.39624
出版商: AIP
数据来源: AIP
摘要:
Recombination of atomic hydrogen in a gas filled cell where the walls are covered with metal evaporated from either tungsten or tantalum filaments has been studied. The high internal energy (vibration) of the product H2molecule indicates that recombination occurs via a new mechanism. This mechanism involves the initial trapping of the H atoms in very weakly bound or physisorbed state on the top of the usual layer of strongly bound or chemisorbed layer of atoms which cover most metals when in presence of hydrogen.
点击下载:
PDF
(548KB)
返 回