Changes of electrical resistivitypand critical temperature Tcwere measured in the A-15 compound V3Si irradiated at low temperature (T⋍ 21 K) by electrons of energyE. An energy range (0.20 MeV < E < 0.35 MeV) is observed where the resistivity increases, whereas the critical temperature remains constant. This result can be interpreted within the framework of the linear chain model of Labbé-Friedel as the sign that the atoms Si start to be displaced atE=0.20 MeV leading to an increase in resistivity, the critical temperature being only affected when the atoms V are displaced atE=0.35 MeV. Comparison of experimental values of damage rates determined either bypor byTcwith calculated theoretical cross sections of V and Si in V3Si add some support to this interpretation. Displacement threshold energies were deduced from this analysis to be equal to (25±1) eV for Si and to (25±1) eV for V. Specific Frenkel pair resistivities were estimated asPFPSi=(4.2±0.5 μΩ.cm/at.% andPFPV=(27±3) μΏ.cm/at. % and decrease of critical temperature percent of vanadium vacancies was estimated as (2.5±0.2) K/% of displaced V atoms.