The diffused minicrystal process yields a germanium driftp‐n‐pbar‐type transistor structure that has fewer practical limitations on emitter, base, and collector resistivities and on base width, than other processes used to make transistor bars for use in high‐frequency transistors. Unneutralized power gains greater than 40 db at ½ mc have been commonly attainable with transistors made using bars having 0.1‐mil base widths. Although thep‐n‐pbars are inherently usable to very high frequencies, base lead overlap capacities have thus far limited the application of early developmental units in this region.