An array of transfer length measurement (TLM) structures was formed on an electrically isolated (0001)n+6H&agr;‐SiC epilayer. Then+6H&agr;‐SiC epilayer contained aninsituincorporated nitrogen concentration of 4×1019cm−3. The specific contact resistance (&rgr;c), sheet resistance (Rs), contact resistance (Rc), and transfer length (LT) were calculated from resistance (RT) versus contact spacing (d) measurements obtained from 17 TLM structures. The linear curves used for these calculations were fit to theRTversusddata by calculating the standard error of linear regression ofRTond; where, the average correlation coefficient with a straight line was 1.0000 and the average standard error of linear regression ofRTondwas 0.08 &OHgr;. The resulting average values were: &rgr;c=1.30×10−5&OHgr; cm2,Rs=14.4 &OHgr;/square,Rc=1.6 &OHgr;, andLT=9.5 &mgr;m. The (111) TiC contacts, epitaxially grown by chemical vapor deposition, were thermally and chemically stable at 1400 °C. The TiC contacts could not be scratched with a tungsten carbide scriber, nor delaminated from the 6H&agr;‐SiC substrate. ©1995 American Institute of Physics.