The porosity P, the free spin density N and the net intrinsic stress &sgr; were measured on evaporated films of amorphous germanium (a‐Ge) subjected to different annealing temperatures Ta. The three quantities N, P and &sgr; decrease with increasing Taand approach zero in the range200 < Ta <300°C. The very similar functional dependence on Taof these quantities suggests that they are associated with the internal void structure observed by several other investigators. This is contrasted with&khgr;a/&khgr;c = 2.5, the ratio of the diamagnetic susceptibilities of amorphous and crystalline germanium, which is independent of Taup to 320°C. Models for the structure of a‐Ge are discussed in light of our data.