Oxygen contamination of Ge during thermal evaporation for Ohmic contacts to GaAs

 

作者: W. C. Moshier,   D.‐W. Tu,   G. D. Davis,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 2  

页码: 582-583

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584404

 

出版商: American Vacuum Society

 

关键词: FIELD EFFECT TRANSISTORS;CONTACT POTENTIAL;ANNEALING;GALLIUM ARSENIDES;NICKEL;CONTAMINATION;OXYGEN;METALLIZATION;FABRICATION;GERMANIUM;OHMIC CONTACTS;COATINGS;IMPURITIES;GOLD;Ge;GaAs

 

数据来源: AIP

 

 

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