Structure of amorphous carbon in amorphous C/Ge multilayers
作者:
N. J. Long,
H. J. Trodahl,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 4
页码: 1753-1756
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345599
出版商: AIP
数据来源: AIP
摘要:
Amorphous C‐Ge multilayers have been produced with periods varying from 2.6 to 12.5 nm. We have studied the multilayers using Raman spectroscopy and dc conductivity measurements and found that their properties change significantly when the carbon sublayer thickness is smaller than 2.5 nm. This value corresponds to the proposed dimension ofsp2bonded carbon islands withina‐C and we find that our results can be understood in terms of the carbon forming these islands, but the islands becoming disconnected as the nominal carbon layer thickness decreases. The conductivity shows a percolation behavior for the thinnest layers.
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