GaN field emitter array diode with integrated anode
作者:
Robert D. Underwood,
S. Keller,
U. K. Mishra,
D. Kapolnek,
B. P. Keller,
S. P. DenBaars,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 2
页码: 822-825
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.589914
出版商: American Vacuum Society
关键词: GaN
数据来源: AIP
摘要:
GaN field emission pyramids are grown by self-limiting, selective-area metalorganic chemical vapor deposition. The self-limitation provides the potential of high uniformity of the pyramids and the selective-area growth allows one to define regular arrays of GaN pyramids for field emitter arrays (FEAs). Fabrication of an integrated anode lowered the operating voltage of the FEAs by narrowing the anode-cathode distance compared to devices with an external anode. A maximum emission current of 0.15 μA/tip has been observed for voltages of 570 V with an emitter-anode separation of 2 μm.
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