Catastrophic sputtering of sulfur by helium
作者:
D. Fink,
J.P. Biersack,
期刊:
Radiation Effects
(Taylor Available online 1982)
卷期:
Volume 64,
issue 1-4
页码: 89-95
ISSN:0033-7579
年代: 1982
DOI:10.1080/00337578208222995
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The sputtering yield of sulfur by 30-300 keV4He+ at 20°C was found to be of the order of 104-106sulfur atoms per incident4He, dependent on the energy and total implanted fluence, and independent of the ion flux onto the target. This effect may be explained by a weakening of the van der Vaals binding between the S8rings due to Coulomb repulsion in the homogeneously charged volume, after a sufficient charge has accumulated in the highly insolating sample. Sulfur emission continues even for some time after the beam is switched off, and emission of sulfur atoms is also observed from non-irradiated areas adjacent to the irradiated spot, even from the rear side of 2-mm thick sulfur targets.
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