Dislocation behavior in InGaAs step‐ and alternating step‐graded structures: Design rules for buffer fabrication
作者:
D. Arau´jo,
D. Gonza´lez,
R. Garci´a,
A. Sacedo´n,
E. Calleja,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 24
页码: 3632-3634
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115341
出版商: AIP
数据来源: AIP
摘要:
A comparison between compositionally stepped and alternating step‐graded structures used in the production of a relaxation buffer layer is carried out by means of transmission electron microscopy. The latter shows higher efficiency in relieving the strain. A simple balance force model permits us to understand the reason for a higher generation of threading dislocations observed in the alternating step‐graded structures. The presented results can be applied as new design rules for buffer fabrication that contrast in some key points with previous published rules as, for example, the ‘‘zero‐net‐strain’’ precept [D. Dunstan, P. Kidd, P. F. Fewster, N. L. Andrew, L. Gonza´lez, Y. Gonza´lez, A. Sacedo´n, and F. Gonza´lez‐Sanz, Appl. Phys. Lett.65, 845 (1994)]. ©1995 American Institute of Physics.
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