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Fast 8 kV metal–oxide semiconductor field‐effect transistor switch

 

作者: R. E. Continetti,   D. R. Cyr,   D. M. Neumark,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1992）
卷期: Volume 63, issue 2  

页码: 1840-1841

 

ISSN:0034-6748

 

年代: 1992

 

DOI:10.1063/1.1143294

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A fast high voltage switch based on ten transformer‐isolated power metal–oxide semiconductor field‐effect transistors in series is described. This circuit can switch 8 kV to ground with a fall time of ≊230 ns, and has proven to be useful for beam potential re‐referencing in pulsed ion beam experiments.

 

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