Gallium arsenide field‐effect transistors by ion implantation
作者:
B. M. Welch,
F. H. Eisen,
J. A. Higgins,
期刊:
Journal of Applied Physics
(AIP Available online 1974)
卷期:
Volume 45,
issue 8
页码: 3685-3687
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1663838
出版商: AIP
数据来源: AIP
摘要:
Gallium arsenide Schottky‐barrier field‐effect transistors have been fabricated in ann‐type film produced by sulfur implantation in a Cr‐doped semi‐insulating GaAs substrate. The conditions of the implantation and the resulting electrical properties of the film are presented. The FET devices are described and the measured current‐voltage characteristics of this device are discussed.
点击下载:
PDF
(248KB)
返 回