Measurement of the sheet resistance of doped layers in semiconductors by microwave reflection
作者:
H. Bhimnathwala,
J. M. Borrego,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 1
页码: 395-398
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587134
出版商: American Vacuum Society
关键词: SURFACE CONDUCTIVITY;SILICON;WAFERS;MICROWAVE RADIATION;DOPED MATERIALS;REFLECTION;SPATIAL RESOLUTION;USES;Si
数据来源: AIP
摘要:
This article presents results obtained using microwave reflection between 26.5 and 36.5 GHz for measuring the sheet resistance of doped layers in semiconductors. The advantage of the technique is that it is nondestructive and has a dynamic range and spatial resolution similar to what it can be obtained with four point resistivity probes. Using this technique, we have been able to measure the sheet resistance of shallow implanted layers on silicon wafers implanted with doses in the range of 1016–1012ions/cm2. The sheet resistance measured was between 30 and 80 000 Ω/⧠.
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