首页   按字顺浏览 期刊浏览 卷期浏览 Polarity determination in ⟨100⟩-orientated GaSb by high-resolution transm...
Polarity determination in ⟨100⟩-orientated GaSb by high-resolution transmission electron microscopy at 300 kV

 

作者: A.C. Wright,   T.L. Ng,   J.O. Williams,  

 

期刊: Philosophical Magazine Letters  （Taylor Available online 1988）
卷期: Volume 57, issue 2  

页码: 107-111

 

ISSN:0950-0839

 

年代: 1988

 

DOI:10.1080/09500838808229618

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The polarity or orientation of ⟨110⟩ projected single crystals of tetrahedral compound semiconductors has been determined by high-resolution electron microscopy (HREM) at 300 kV. The method has been applied to GaSb and computer simulations show that the image contrast is the reverse of that expected intuitively. Similar results are predicted for GaAs.

 

点击下载:  PDF (470KB)



返 回