Spontaneous lateral alignment ofIn0.25Ga0.75Asself-assembled quantum dots on (311)B GaAs grown by gas source molecular beam epitaxy
作者:
Kenichi Nishi,
Takayoshi Anan,
Akiko Gomyo,
Shigeru Kohmoto,
Shigeo Sugou,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 26
页码: 3579-3581
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119239
出版商: AIP
数据来源: AIP
摘要:
Spontaneous lateral alignment was observed in InGaAs quantum dots formed by self-assembly on (311)B GaAs by gas source molecular beam epitaxy. The alignment occurred in a direction inclined about 60° from the [011] direction on a (3-11) [(311)B] surface. A typical base diameter of the dots was about120±10 nm.The heights varied from 3 to 13 nm as the nominal thickness of the InGaAs layer increased from 4 to 8 nm. The formation mechanism for the alignment is studied based on the growth thickness dependence of the dot structures. A photoluminescence linewidth of 24 meV was obtained from 9 nm high dots at 77 K, indicating the formation of a uniform dot structure. ©1997 American Institute of Physics.
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