Mobility and carrier‐concentration profiles ofP+ion‐implanted, isothermally annealed silicon crystals
作者:
T. Mitsuishi,
Y. Sasaki,
Huynh van Thieu,
N. Yoshihiro,
期刊:
Journal of Applied Physics
(AIP Available online 1982)
卷期:
Volume 53,
issue 1
页码: 774-776
ISSN:0021-8979
年代: 1982
DOI:10.1063/1.329988
出版商: AIP
数据来源: AIP
摘要:
Experimental data of carrier mobility and carrier concentration profiles in depth from the surface of silicon wafers implanted with 50 keV P+ions of various doses, isothermally annealed at 480 °C, are reported. Generation and annihilation of mobility controlling defects and carrier trapping centers are discussed with these data. A comment on the carrier recovery of heavily dosed specimens is given.
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