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Silicon strained layers grown on GaP(001) by molecular beam epitaxy

 

作者: P. M. J. Mare´e,   R. I. J. Olthof,   J. W. M. Frenken,   J. F. van der Veen,   C. W. T. Bulle‐Lieuwma,   M. P. A. Viegers,   P. C. Zalm,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 58, issue 8  

页码: 3097-3103

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335811

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Mismatch‐induced lattice strain in thin Si films grown by molecular beam epitaxy on GaP(001) substrates has been measured using transmission electron microscopy, Raman spectroscopy, and Rutherford backscattering. The perpendicular strain in the topmost part of the layers is found to be enhanced in comparison to elasticity theory. Relaxation of the strain occurs by the formation of misfit dislocations at significantly larger thickness than predicted by equilibrium theory.

 

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