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Scanning tunneling microscopy observation of Al‐induced reconstructions of the Si(111) surface: Growth dynamics

 

作者: M. Yoshimura,   K. Takaoka,   T. Yao,   T. Sueyoshi,   T. Sato,   M. Iwatsuki,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 4  

页码: 2434-2436

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587777

 

出版商: American Vacuum Society

 

关键词: SILICON;SURFACE RECONSTRUCTION;PHASE BOUNDARIES;ALUMINIUM;ADSORPTION;ANNEALING;ISLAND STRUCTURE;TEMPERATURE RANGE 0400−1000 K;STM;Si;Al

 

数据来源: AIP

 

摘要:

The atomic structure of α‐7×7 and γ‐phase structure has been investigated with use of scanning tunneling microscopy. Structural models for both phases are presented where both structures are based on the dimer adatom stacking‐fault structure. Continuously linked boundaries are observed between these phases, in contrast to those between α‐7×7 and √7×√7 phase. It is found that the properties of the boundaries are closely related to the basement structure. Phase transitions appearing at higher or lower temperature are discussed in terms of growth dynamics.  

 

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