The fabrication and performance characteristics of a InGaAsP laser structure with semi‐insulating current confining layers are reported. The semi‐insulating layers are Fe‐doped InP and are grown using the metalorganic chemical vapor deposition growth technique. The lasers have threshold currents in the range 20–30 mA and external differential quantum efficiency ∼0.2 mW/mA/facet at 30 °C. The bandwidth for small‐signal response is ∼2 GHz which suggests that the laser structure is suitable for high bit rate lightwave transmission systems. Initial aging results yield an estimated operating lifetime of 10 years at 20 °C.