Stress‐released layer formed by pulsed ruby laser annealing on GaAs‐on‐Si
作者:
Yong Kim,
Moo Sung Kim,
Eun Kyu Kim,
Hyeon‐Soo Kim,
Suk‐Ki Min,
Hyun Woo Lee,
Jae Kwan Kim,
Choochon Lee,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 7
页码: 3358-3361
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345374
出版商: AIP
数据来源: AIP
摘要:
The effects of short pulsed ruby laser annealing on GaAs layers grown on Si substrates by metalorganic chemical vapor deposition have been characterized by Raman spectroscopy and double‐crystal x‐ray diffraction. After laser melting and regrowth, the stress‐released layer is formed in the near‐surface. The formation of the stress‐released layer results in the microcracking of the pulsed‐laser‐annealed GaAs surface. However, the high crystalline quality of this stress‐released layer is detected. Furthermore, when GaAs layer is overgrown on this stress‐released layer, this layer plays a role of blocking the dislocation threading into the overgrown GaAs layer.
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