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Radiation damage and annealing studies of ion-implanted aluminium

 

作者: A.D. Buonaquisti,   R.A. Collins,   G. Dearnaley,  

 

期刊: Radiation Effects  （Taylor Available online 1982）
卷期: Volume 67, issue 1-2  

页码: 43-48

 

ISSN:0033-7579

 

年代: 1982

 

DOI:10.1080/01422448108226567

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The effect of implantation induced radiation damage on the oxidation of aluminium has been studied using implanted krypton. Annealing studies have revealed a complex recovery process tentatively ascribed to the repair of point defects, dislocation loops and subsequent grain growth. Higher dose (1O17ions cm−2) xenon implants resulted in implant out-diffusion and surface exfoliation during annealing.

 

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