Role of lifetime and energy-bandgap narrowing in diffused-junction silicon solar cells
作者:
K.Sukulal,
K.N.Bhat,
期刊:
IEE Proceedings J (Optoelectronics)
(IET Available online 1987)
卷期:
Volume 134,
issue 4
页码: 249-258
年代: 1987
DOI:10.1049/ip-j.1987.0042
出版商: IEE
数据来源: IET
摘要:
The effects of bandgap narrowing, surface recombination and lifetime on the performance ofn+p-diffused-junction silicon solar cells are analysed, and experimental results are given to show that the bulk recombination in the n+-diffused region plays an important role in limiting the open-circuit voltage of solar cells. The analysis shows that the surface effects are relatively unimportant in diffused-junction solar cells with surface doping concentration above 1020/cm3because of the low lifetime due to phonon-assisted recombination in addition to Auger recombination in the heavily doped layer.The analysis also brings out the effects of bandgap-narrowing models and lifetime models on the estimated carrier-concentration distributions, short-circuit currents and open-circuit voltages of solar cells. The theoretical results are compared with the experimental data obtained onn+psolar cells having differentn+-layer thicknesses and different surface concentrations, to demonstrate the tenability of the bandgapnarrowing and lifetime models used in the analysis.
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