A study of silicon oxide etch rate uniformity in a high density, rf inductively coupled system with an rf capacitively coupled substrate electrode is presented. By introducing spatial variation of rf coupling to the substrate, etch rate uniformity across the wafer can be altered from a profile that is ∼20% higher in the center to one that is ∼10% lower in the center. The effect of spatially varying rf coupling impedance to the substrate is dependent on substrate resistance. Predicted etch rate profiles are obtained with a two‐dimensional analytic model of the plasma source that is coupled to an equivalent circuit discretization of the electrode assembly, substrate, and sheath. Model results compare favorably with experimental measurements. ©1995 American Institute of Physics.