SIMS evaluation of contamination on ion‐cleaned (100) InP substrates
作者:
M. G. Dowsett,
R. M. King,
E. H. C. Parker,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 31,
issue 8
页码: 529-531
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89765
出版商: AIP
数据来源: AIP
摘要:
Recent work has indicated that residual contamination on III‐V substrates has an adverse effect on epilayer nucleation. This letter presents preliminary results of measurements of contamination levels on methanol‐bromine polished ion‐cleaned (100) InP substrates using low [primary ion dose (<5×1012ions mm−2) secondary ion mass] spectrometry (SIMS). Even after ion etching ≃0.48 &mgr; from the surface residual contamination levels in the 100‐ppm range persist, the largest being oxygen. Micrographs of the ion‐cleaned surface showed precipitation of In at the surface which was caused by differential sputtering effects.
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