Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures
作者:
A. Billeb,
W. Grieshaber,
D. Stocker,
E. F. Schubert,
R. F. Karlicek,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 21
页码: 2790-2792
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119060
出版商: AIP
数据来源: AIP
摘要:
Luminescence spectra of GaN epitaxial layers grown on sapphire display a strong intensity modulation of the below-band gap transitions and on the low-energy side of the near-band gap transition. The intensity modulation is attributed to a microcavity formed by the semiconductor–air and semiconductor–substrate interface. The microcavity effect is enhanced by using metallic reflectors which increase the cavity finesse. It is shown that microcavity effects can be used to determine the refractive index of the microcavity active material. Using this method, the GaN refractive index is determined and expressed analytically by a Sellmeir fit. ©1997 American Institute of Physics.
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