Planarized growth of AlGaAs/GaAs heterostructures on patterned substrates by molecular beam epitaxy
作者:
M. C. Ho,
T. P. Chin,
C. W. Tu,
P. M. Asbeck,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 3
页码: 2128-2130
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.354739
出版商: AIP
数据来源: AIP
摘要:
The profiles of AlGaAs/GaAs heterostructures grown by gas‐source molecular beam epitaxy (GSMBE) on patterned substrates at different growth temperatures have been studied. It was found that at higher substrate temperature, the GSMBE growth results in Al clustering and the formation of high index planes. With a proper combination of low growth temperature and etched profile, a quasiplanarized surface is obtainable. A process simulation program is found to be capable of simulating the GSMBE growth profile at lower substrate temperature with reasonable accuracy.
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