Silicon nanowires prepared by laser ablation at high temperature
作者:
Y. F. Zhang,
Y. H. Tang,
N. Wang,
D. P. Yu,
C. S. Lee,
I. Bello,
S. T. Lee,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 15
页码: 1835-1837
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121199
出版商: AIP
数据来源: AIP
摘要:
Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature laser-ablation method with growth rates ranging from 10 to 80 &mgr;m/h. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and length up to a few hundreds microns. Twins and stacking faults have been observed in the Si core of the nanowires. The lattice structure and constant of the nanowires as determined from x-ray diffraction (XRD) are nearly identical to those of bulk Si, although the relative XRD peak intensities are different from those of randomly oriented Si crystallites. Raman scattering from the nanowires shows an asymmetric peak at the same position as that of bulk crystalline silicon. ©1998 American Institute of Physics.
点击下载:
PDF
(281KB)
返 回