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Molecular beam epitaxy growth of high performance GaAs power field effect transistors

 

作者: J. K. Abrokwah,   J. Geddes,   M. Longerbone,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 5  

页码: 1323-1326

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.582987

 

出版商: American Vacuum Society

 

关键词: FIELD EFFECT TRANSISTORS;MOLECULAR BEAM EPITAXY;FABRICATION;PERFORMANCE;GATES;POWER;EFFICIENCY;GALLIUM ARSENIDES;CRYSTAL DOPING;POWER RANGE MILLI W;GaAs

 

数据来源: AIP

 

摘要:

GaAs power field effect transistors (FET’s) with the highest power output per unit gate width (0.46 W/mm) reported to data at Ka‐band frequency were fabricated using molecular beam epitaxy material with active layer doping of 3.6×1017cm3. Power output of 110 mW and conversion efficiency of 11% were achieved with half‐micron gate GaAs FET’s in a 30 GHz amplifier with an associated gain of 3.4 dB. This report describes the molecular beam epitaxy (MBE) growth conditions and results of characterization of the power FET.

 

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