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X‐ray observation of twin faults in (1,1,1) CdTe epitaxial layers and in ...
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X‐ray observation of twin faults in (1,1,1) CdTe epitaxial layers and in (1,1,1) Hg1−xXxTe/CdTe superlattices
作者:
R. D. Horning,
J.‐L. Staudenmann,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 23
页码: 1590-1592
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97289
出版商: AIP
数据来源: AIP
摘要:
This letter describes x‐ray precession photographs of (1,1,1) CdTe epitaxial layers on GaAs, CdTe, and Cd0.96Zn0.04Te substrates. The precession method is further applied to some (1,1,1) Hg1−xXxTe/CdTe superlattices whereX=Cd or Mn. More than half of the samples used in this study were grown by molecular beam epitaxy, others by metalorganic chemical vapor deposition, and a few by liquid phase epitaxy. The results unambiguously show that the common (1,1,1) face centered cubic twin fault, or stacking disorder, seen in bulk growth methods also exhibits its effects with the mentioned layer deposition growth techniques, except when liquid phase epitaxy is used. It seems that the twinning is intrinsic to the (1,1,1) growth in face centered cubic systems. In addition, devices with twin domains may have lower electronic mobilities. It further means that more experimental work is needed to produce untwinned single‐crystal materials deposited by molecular beam techniques.
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