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Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon

 

作者: I. A. Chaiyasena,   P. M. Lenahan,   G. J. Dunn,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 19  

页码: 2141-2143

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104986

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report the first observation of a nitrogen dangling bond center in nitrided thermally grown silicon dioxide films on silicon. Interpretation of the14N hyperfine parameters indicates that the unpaired electron wave function is strongly localized on the central nitrogen and that the wave function is highlypin character.

 

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