Influence of indium segregation on the emission from InGaAs/GaAs quantum wells
作者:
Haiping Yu,
Christine Roberts,
Ray Murray,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 17
页码: 2253-2255
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113183
出版商: AIP
数据来源: AIP
摘要:
Indium segregation in InxGa1−xAs/GaAs (0.05<x<0.25) quantum wells grown by molecular beam epitaxy has been investigated using low temperature photoluminescence. Additional features at low energy are evident in some of the spectra that are consistent with trapping of free excitons by In‐rich islands at the top interface, which occurs as the result of In segregation. ©1995 American Institute of Physics.
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