Measurement of GaAs temperature‐dependent optical constants by spectroscopic ellipsometry

 

作者: C. H. Kuo,   S. Anand,   R. Droopad,   K. Y. Choi,   G. N. Maracas,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 2  

页码: 1214-1216

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587047

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;MOLECULAR BEAM EPITAXY;OPTICAL CONSTANTS;ELLIPSOMETRY;TEMPERATURE DEPENDENCE;TEMPERATURE RANGE 273−400 K;TEMPERATURE RANGE 0400−1000 K;INTERBAND TRANSITIONS;DIELECTRIC FUNCTION;GaAs

 

数据来源: AIP

 

摘要:

 

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