MeV, self‐ion implantation in Si at liquid nitrogen temperature; a study of damage morphology and its anomalous annealing behavior
作者:
O. W. Holland,
C. W. White,
M. K. El‐Ghor,
J. D. Budai,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 5
页码: 2081-2086
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346561
出版商: AIP
数据来源: AIP
摘要:
The damage formed by 1.25 MeV, self‐ions in Si at liquid nitrogen temperature was studied. A dominant feature of the damage for moderate ion fluences is the presence of isolated amorphous regions over the range of the ions. The microstructure of this damage is detailed and formation mechanisms discussed. The amorphous regions are shown to give rise to strain in the surrounding crystal lattice which varies with ion dose in a complicated manner. The annealing behavior of the damage was studied and two distinct, low‐temperature stages observed. Different mechanisms are shown to be responsible for each stage including a transient mechanism at 300 °C initiated by the release of defects from damage clusters, and enhanced crystallization of amorphous Si at 400 °C due to lattice stress.
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