Angular distribution of Si atoms sputtered by keV Ar+ions
作者:
T. Okutani,
M. Shikata,
S. Ichimura,
R. Shimizu,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 5
页码: 2884-2887
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327957
出版商: AIP
数据来源: AIP
摘要:
Angular distributions of sputtered Si atoms from polycrystalline Si targets were measured for Ar+ions of 3 and 10 keV, at angles of incidence of 0° (normal incidence) and 60°. The results were compared with the theoretical ones obtained from Monte Carlo calculations by Kangetal. Theory describes qualitatively the experimental results fairly well. Some discrepancy between the theoretical and experimental results was, however, found in the preferred ejection angles. The preferred ejection angle of the experimental results for 10 keV at angle of incidence of 60° agrees very well with that suggested by the universal curve of the correlation between the preferred ejection angle and sputtering yield, which has been proposed by Betzetal.
点击下载:
PDF
(207KB)
返 回