Detection of excess crystalline As and Sb in III‐V oxide interfaces by Raman scattering
作者:
Roger L. Farrow,
Richard K. Chang,
Stanley Mroczkowski,
Fred H. Pollak,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 31,
issue 11
页码: 768-770
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89542
出版商: AIP
数据来源: AIP
摘要:
Raman backscattering from oxidized GaAs and InAs yielded two anomalous peaks of large scattering strength which we have concluded to be from excess As in the interface between the oxides and underlying semiconductors. Similarly, we concluded that the two anomalous peaks from GaSb and InSb are from excess interface Sb. From the frequencies, line shapes, and polarization selection rules, we deduced that the excess As and Sb are in the crystalline semimetal phase, as distinct from the amorphous phase.
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