Raman scattering measurements are reported for amorphous 3–5 and 2–6 systems (GaAs,InAs,GaSb,InP,ZnTeandCdTe) prepared by dc sputtering. The spectra, which extend to low frequencies, indicate density of states features in the 3–5 systems related to that of the corresponding crystal as well as distinct wrong bond features in certain materials. The source of these wrong bonds is discussed and suggested to arise from either microscopic phase separation or clustering on an atomic scale. A quantitative estimate fora‐GaSbsuggests that the number of wrong Sb bonds is small but are observed due to their large Raman cross section. The a‐2–6 spectra also suggests wrong bonds, strongly enhanced by the relatively large scattering cross section of a‐Te.