Valence and Conduction Band State Densities of Crystalline and Amorphous Ge as Seen via Photoelectron Spectroscopy
作者:
D. E. Eastman,
J. L. Freeouf,
M. Erbudak,
期刊:
AIP Conference Proceedings
(AIP Available online 1974)
卷期:
Volume 20,
issue 1
页码: 95-101
ISSN:0094-243X
年代: 1974
DOI:10.1063/1.2945998
出版商: AIP
数据来源: AIP
摘要:
Photoemission energy distributions N(E,&ohgr;) were taken as a function of both electron energy E and photon energy ℏ&ohgr; using synchrotron radiation. Various spectral features associated with critical points in both the valence and conduction bands evident in crystalline Ge are absent in amorphous Ge. Features observed for amorphous Ge include: valence p‐bands about 4.2 eV wide with a peak at ∼ 1.4 eV below the valence band edge Ev, an overall valence bandwidth of ∼ 11.6 eV, and a conduction band state density peak at ∼ 2.3 eV above Ev.
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