Semi‐insulating crystals of InP with resistivities of 1–3×106&OHgr; cm have been grown by the liquid encapsulated Czochralski method from melts co‐doped with Ti, a deep donor located 0.62±0.02 eV below the conduction band, and either Zn, Cd, or Be. This technique should make it possible to obtain crystals with resistivities of 107–108&OHgr; cm, which would be of interest for integrated circuit applications if their thermal stability were found to exceed that of Fe‐doped semi‐insulating InP.