Reaction of dimers and diatomic molecules with GaAs(110): Molecular dynamics computer simulations
作者:
Madhu Menon,
Roland E. Allen,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 4
页码: 1302-1305
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584253
出版商: American Vacuum Society
关键词: OXYGEN;GALLIUM ARSENIDES;COMPUTERIZED SIMULATION;CHEMISORPTION;SORPTIVE PROPERTIES;SURFACE STRUCTURE;DIMERS;ALUMINIUM;MOLECULAR CLUSTERS;METASTABLE STATES;GaAs
数据来源: AIP
摘要:
Simulations have been performed for dimers and diatomic molecules adsorbing on the (110) surface of GaAs. Al2usually remains together after adsorption, indicating a tendency toward cluster formation. In one run, this dimer broke up, but the energy was found to be substantially higher; i.e., the dissociated atoms are metastable with respect to the metallic cluster. On the other hand, O2tends to dissociate immediately upon adsorption, in ways that suggest the beginning of oxide formation. Molecular chemisorption of O2was observed in one run, but found to be metastable.
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