Properties and thermal stability of the SiO2/GaAs interface with different surface treatments
作者:
A. Paccagnella,
A. Callegari,
J. Batey,
D. Lacey,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 3
页码: 258-260
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.104217
出版商: AIP
数据来源: AIP
摘要:
High quality SiO2films were deposited by plasma‐enhanced chemical vapor deposition on GaAs wafers which received different surface treatments. It was found that metal‐oxide‐semiconductor (MOS) capacitors which received surface nitridation were unstable under high‐temperature anneal (600 °C). These instabilities are interpreted in terms of free As precipitates at the interface. When, instead, a thin Si layer was deposited on the GaAs surface, stable interfaces were obtained at 600 °C. These MOS capacitors appear to show both deep depletion and inversion.
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