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Chemical reaction at the annealed Si/Yb interface

 

作者: G. Rossi,   J. Nogami,   J. J. Yeh,   I. Lindau,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 3  

页码: 530-532

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582593

 

出版商: American Vacuum Society

 

关键词: chemical reactions;annealing;silicon;interface states;fermi level;ytterbium;ytterbium silicides;synthesis;chemical composition;interfaces

 

数据来源: AIP

 

摘要:

We present the first evidence of formation of mixed valent compounds at the Si(111)/Yb interface upon annealing. Two stable and uniform compositions were found, these being related to the known bulk silicides YbSi and YbSi2. The mixed valence behavior is seen in the presence of the strong 4f13(Yb3+) signal and in the shift of the 4f14(Yb2+) signal to the Fermi level.

 

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