Amorphization and recrystallization of 6H‐SiC by ion‐beam irradiation
作者:
V. Heera,
J. Stoemenos,
R. Ko¨gler,
W. Skorupa,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 7
页码: 2999-3009
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.358649
出版商: AIP
数据来源: AIP
摘要:
Amorphization of 6H‐SiC with 200 keV Ge+ions at room temperature and subsequent ion‐beam‐induced epitaxial crystallization (IBIEC) with 300 keV Si+ions at 480 °C have been studied by Rutherford backscattering spectrometry/channeling and transmission electron microscopy analysis. Experimental results on amorphous layer thicknesses have been compared withtrimcalculations in association with the critical energy density model. Density changes during amorphization have been observed by step height measurements. Particular attention has been directed to the crystal quality and a possible polytype transformation during the IBIEC regrowth. The IBIEC process consists of two stages and results in a multilayer structure. In the initial phase an epitaxial growth of 6H‐SiC has been obtained. With increasing IBIEC dose the epitaxial growth changes to columnar growth and is stopped by polycrystallization of 3C polytype in the near‐surface region. ©1995 American Institute of Physics.
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