Monte Carlo methods have been used to obtain the electron energy distributions, transport parameters, and rate coefficients for electrons in a three‐valley model of GaAs with nonparabolic energy bands in the presence of an external electric field. A technique has been developed which reduces the computation time when using self‐scattering algorithm. Consequently, for a given computation time, more test particles can be used in the simulation. This results in a reduction in the fluctuation of the calculated quantities. In this paper, the Monte Carlo technique is presented for two generic time variations of the applied field: (a) dc and (b) a step change. The results shown are for the steady‐state behavior of electrons in GaAs, for dc electric fields with values up to 70 kV/cm.