Model for the Formation of Silicon Carbide from the Pyrolysis of Dichlorodimethylsilane in Hydrogen: II, Silicon Carbide Formation from Silicon and Methane
作者:
Domenick E. Cagliostro,
Salvatore R. Riccitiello,
期刊:
Journal of the American Ceramic Society
(WILEY Available online 1993)
卷期:
Volume 76,
issue 1
页码: 49-53
ISSN:0002-7820
年代: 1993
DOI:10.1111/j.1151-2916.1993.tb03688.x
出版商: Blackwell Publishing Ltd
数据来源: WILEY
摘要:
A model is developed for the deposition of silicon carbide from the pyrolysis of dichlorodimethylsiane in hydrogen, in a tubular reactor at temperatures from 700° to 1100°C and 1.013 × 105Pa (1 atm) pressure. Concentration of dichlorodimethylsilane varied from 2 to 8 vol%. Gas chromatography was used to determine the volatile products of reaction, and gravimetric analysis was used to determine the total silicon and silicon carbide deposition on the tube. The model developed based on the experimental data that assumes the following chemical reactions:The rate constants derived from a nonlinear regression analysis are report
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