首页   按字顺浏览 期刊浏览 卷期浏览 Effect of Carrier Heating on the Diffusion Currents in Space‐Charge‐Limit...
Effect of Carrier Heating on the Diffusion Currents in Space‐Charge‐Limited Current Flow

 

作者: R. Stratton,   E. L. Jones,  

 

期刊: Journal of Applied Physics  （AIP Available online 1967）
卷期: Volume 38, issue 12  

页码: 4596-4608

 

ISSN:0021-8979

 

年代: 1967

 

DOI:10.1063/1.1709191

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The theory of hot electron diffusion is developed for the case of space‐charge‐limited current flow in insulators or weakly doped semiconductors. To compare the results of the calculation with experiments on siliconn+‐&pgr;‐n+structures by Denda and Nicolet, a crude theory of the uniform‐field hot‐electron effect inn‐type silicon is developed.

 

点击下载:  PDF (854KB)



返 回