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Optical properties of ultrathin silicon–germanium superlattices

 

作者: K. B. Wong,   I. Morrison,   M. Jaros,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 4  

页码: 1346-1349

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584262

 

出版商: American Vacuum Society

 

关键词: SUPERLATTICES;OPTICAL PROPERTIES;ELECTRONIC STRUCTURE;SILICON;GERMANIUM;INTERFACE STATES;BAND STRUCTURE;ENERGY GAP;(Ge,Si)

 

数据来源: AIP

 

摘要:

We have carried out pseudopotential calculations of the electronic structure of a Si4Ge4(001) superlattice grown on a Si substrate. We show that a model in which the microscopic potential and the bond lengths in the Ge layer are bulklike can account for the transition energies and oscillator strengths of the optical spectra reported for this structure in the literature. This is achieved without invoking a breakdown of the translational symmetry and indirect transitions.

 

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