Positron annihilation in electron-irradiated n-type gap crystals
作者:
V.N. Brudnyi,
S.A. Vorobiev,
A.A. Tsoi,
V.I. Shahovtsov,
期刊:
Radiation Effects
(Taylor Available online 1983)
卷期:
Volume 79,
issue 1-4
页码: 123-130
ISSN:0033-7579
年代: 1983
DOI:10.1080/00337578308207399
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The defects in n-GaP crystals irradiated by 2.3 MeV electrons up to 1 × 1019cm−2at RT were studied by means of positron annihilation (angular correlation) and electrical property measurements. It was found that positrons are trapped in some radiation-induced vacancy-type defects (acceptors) but that the effect saturates at high electron fluences (D1 × 1018cm−2). The trapping rate in irradiated samples increases with temperature in the range 77–300 K. Post-irradiation isochronal annealing reveals the positron traps clustering at about 200–280°C. All positron sensitive radiation-induced defects disappear upon annealing up to 500°C.
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