Strained InGaAs/InP quantum well lasers
作者:
H. Temkin,
T. Tanbun‐Ek,
R. A. Logan,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 13
页码: 1210-1212
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102562
出版商: AIP
数据来源: AIP
摘要:
Quantum well lasers based on strained InxGa1−xAs/InP were grown by atmospheric pressure metalorganic vapor phase epitaxy. Buried‐heterostructure lasers with the active layer consisting of three quantum wells, each ∼50 A˚ thick, placed in a continuously graded waveguide, exhibit threshold currents as low as 15 mA, high quantum efficiency (24%), and power output (∼100 mW), independent of composition. Changing the In concentration fromx=0.48 to 0.62 results in the lasing wavelength shift from 1.45 to 1.62 &mgr;m. These wavelengths are in excellent agreement with the calculated energies of the electron–heavy hole exciton transition.
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