Aggregation of defects and thermal‐electric breakdown in MgO
作者:
J. Narayan,
R. A. Weeks,
E. Sonder,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 12
页码: 5977-5981
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.324565
出版商: AIP
数据来源: AIP
摘要:
Transmission electron microscopy has been used to study defects in as‐grown MgO single crystals and in crystals which had undergone high‐temperature electrical conduction for long periods of time. Besides dislocation loops of (a/2〈110〉) Burgers vectors and precipitates, a new type of defect, dislocation loops of &agr;〈100〉 Burgers vectors lying in {100} planes, has been observed in electric‐field‐treated specimens. The nature of both (a/2) 〈110〉 anda〈100〉 loops was determined to be vacancy type. The relation of this microstructure to the observed increase in electrical conductivity, which ultimately results in thermal‐electric breakdown of the samples, is discussed.
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