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Aggregation of defects and thermal‐electric breakdown in MgO

 

作者: J. Narayan,   R. A. Weeks,   E. Sonder,  

 

期刊: Journal of Applied Physics  (AIP Available online 1978)
卷期: Volume 49, issue 12  

页码: 5977-5981

 

ISSN:0021-8979

 

年代: 1978

 

DOI:10.1063/1.324565

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Transmission electron microscopy has been used to study defects in as‐grown MgO single crystals and in crystals which had undergone high‐temperature electrical conduction for long periods of time. Besides dislocation loops of (a/2⟨110⟩) Burgers vectors and precipitates, a new type of defect, dislocation loops of &agr;⟨100⟩ Burgers vectors lying in {100} planes, has been observed in electric‐field‐treated specimens. The nature of both (a/2) ⟨110⟩ anda⟨100⟩ loops was determined to be vacancy type. The relation of this microstructure to the observed increase in electrical conductivity, which ultimately results in thermal‐electric breakdown of the samples, is discussed.

 

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